Effects of resonant interface states on tunneling magnetoresistance
نویسندگان
چکیده
Based on model and ab initio calculations we discuss the effect of resonant interface states on the conductance of epitaxial tunnel junctions. In particular we show that the ‘‘hot spots’’ found by several groups in ab initio calculations of symmetrical barriers of the ki-resolved conductance can be explained by the formation of bonding and antibonding hybrids between the interface states on both sides of the barrier. If the resonance condition for these hybrid states is met, the electron tunnels through the barrier without attenuation. Even when both hybrid states move together and form a single resonance, strongly enhanced transmission is still observed. The effect explains why, for intermediate barrier thicknesses, the tunneling conductance can be dominated by interface states, although hot spots only occur in a tiny fraction of the surface Brillouin zone.
منابع مشابه
Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of a Fe(001) surface
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes....
متن کاملTunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.
Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. ...
متن کاملResonant tunneling via spin-polarized barrier states in a magnetic tunnel junction
Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared to the magnetoresistance due to direct tunneling between the ferromagnetic electrodes. Moreover, i...
متن کاملResonant inversion of tunneling magnetoresistance.
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 microm(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Büttiker theory explain this behavior in terms of disorder-driven stati...
متن کاملThe Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002